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this is information on a product in full production. april 2013 docid024554 rev 2 1/13 13 stf6n65k3(045y) n-channel 650 v, 1.1 typ., 5.4 a supermesh3? power mosfet in a to-220fp narrow leads package datasheet ? production data figure 1. internal schematic diagram features ? 100% avalanche tested ? extremely high dv/dt capability ? gate charge minimized ? very low intrinsic capacitance ? improved diode reverse recovery characteristics ? zener-protected applications ? switching applications description this supermesh3? power mosfet is the result of improvements applied to stmicroelectronics? supermesh? technology, combined with a new optimized vertical structure. this device boasts an extremely low on- resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications. am15572v1 1 2 3 to-220fp narrow leads order code v ds r ds(on) max i d p tot stf6n65k3(045y) 650 v 1.3 5.4 a 30 w table 1. device summary order code marking package packaging stf6n65k3(045y) 6n65k3 to-220fp narrow leads tube www.st.com
contents stf6n65k3(045y) 2/13 docid024554 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
docid024554 rev 2 3/13 stf6n65k3(045y) electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 650 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 5.4 (1) 1. limited by package a i d drain current (continuous) at t c = 100 c 3 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 21.6 (1) a p tot total dissipation at t c = 25 c 30 w i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max) 5.4 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 100 mj esd gate-source human body model (c = 100 pf, r = 1.5 k ) 2.5 kv dv/dt (3) 3. i sd 5.4 a, di/dt 400 a/s, v dd = 80% v (br)dss peak diode recovery voltage slope 12 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 2500 v t stg storage temperature -55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 4.17 c/w r thj-amb thermal resistance junction-ambient max 62.5 c/w
electrical characteristics stf6n65k3(045y) 4/13 docid024554 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 650 v i dss zero gate voltage drain current (v gs = 0) v ds = 650 v v ds = 650 v, t c =125 c 0.8 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 9 a v gs(th) gate threshold voltage v ds = v gs , i d = 50 a 3 3.75 4.5 v r ds(on static drain-source on-resistance v gs = 10 v, i d = 2.7 a 1.1 1.3 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 880 65 12 - pf pf pf c o(tr) (1) 1. c oss eq . time related is defined as a constant equivalent capacitance giving the sa me charging time as c oss when v ds increases from 0 to 80% v dss eq. capacitance time related v gs = 0, v ds = 0 to 520 v -43-pf c o(er) (2) 2. c oss eq . energy related is defined as a constant equiva lent capacitance giving t he same stored energy as c oss when v d s increases from 0 to 80% v dss eq. capacitance energy related -27-pf r g intrinsic gate resistance f = 1 mhz open drain - 3.5 - q g total gate charge v dd = 500 v, i d = 5.4 a, v gs = 10 v (see figure 16 ) -33-nc q gs gate-source charge - 4 - nc q gd gate-drain charge - 21 - nc
docid024554 rev 2 5/13 stf6n65k3(045y) electrical characteristics the built-in back-to-back zener diodes have been specifically designed to enhance not only the device?s esd capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. in this respect, the zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. the integrated zener diodes thus eliminate the need for external components. table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 325 v, i d = 2.7 a, r g = 4.7 , v gs = 10 v (see figure 15 ) -14 -ns t r rise time - 10 - ns t d(off) turn-off-delay time - 44 - ns t f fall time - 24 - ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 5.4 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 21.6 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 5.4 a, v gs = 0 - 1.5 v t rr reverse recovery time i sd = 5.4 a, di/dt = 100 a/s v dd = 60 v (see figure 20 ) - 285 ns q rr reverse recovery charge - 5100 nc i rrm reverse recovery current - 14 t rr reverse recovery time i sd = 5.4 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 20 ) - 330 ns q rr reverse recovery charge - 2500 nc i rrm reverse recovery current - 15.5 a table 8. gate-source zener diode symbol parameter test conditions min. typ. max. unit v (br)gso gate-source breakdown voltage i gs = 1 ma, i d =0 30 - - v
electrical characteristics stf6n65k3(045y) 6/13 docid024554 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 1 0.1 0.01 0.001 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse 10 am12960v1 i d 6 4 2 0 0 20 v ds (v) (a) 10 8 10 6v v gs =10v 12 am12962v1 i d 2 0 0 4 v gs (v) (a) 2 6 4 v ds =15v 6 8 8 10 am12963v1 v gs 6 4 2 0 0 q g (nc) (v) 30 8 10 20 10 v dd =500v i d =5.4a 12 300 200 100 0 400 500 v ds v ds (v) am12964v1 r ds(on) 1.05 1.00 0.95 0.90 0 2 i d (a) ( ) 1 3 1.10 1.15 1.20 1.25 4 5 1.30 1.35 v gs =10v am12965v1
docid024554 rev 2 7/13 stf6n65k3(045y) electrical characteristics figure 8. capacitance variations figure 9. output capacitance stored energy figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. normalized bv dss vs temperature figure 13. source-drain diode forward characteristics c 1000 100 10 1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss am12966v1 e oss 3 2 1 0 0 100 v ds (v) (j) 400 4 200 300 5 500 am12967v1 v gs(th) 1.00 0.90 0.80 0.70 -75 t j (c) (norm) -25 1.10 75 25 125 v ds =v gs i d =50a am12968v1 r ds(on) 2.0 1.5 1.0 0.5 -75 t j (c) (norm) -25 75 25 125 2.5 0 am12969v1 v gs =10v i d =2.7a bv dss -75 t j (c) (norm) -25 75 25 125 0.90 0.95 1.00 1.05 1.10 am12970v1 i d =1ma v sd 0 2 i sd (a) (v) 1 5 3 4 0 0.2 0.4 0.6 0.8 1.0 t j =-50c t j =150c t j =25c 6 am12971v1
electrical characteristics stf6n65k3(045y) 8/13 docid024554 rev 2 figure 14. maximum avalanche energy vs temperature e as 0 40 t j (c) (mj) 20 100 60 80 0 20 40 60 80 100 i d =5.4 a v dd =50 v 120 am12972v1
docid024554 rev 2 9/13 stf6n65k3(045y) test circuits 3 test circuits figure 15. switching times test circuit for resistive load figure 16. gate charge test circuit figure 17. test circuit for inductive load switching and diode recovery times figure 18. unclamped inductive load test circuit figure 19. unclamped inductive waveform figure 20. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data stf6n65k3(045y) 10/13 docid024554 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
docid024554 rev 2 11/13 stf6n65k3(045y) package mechanical data figure 21. to-220fp narrow leads drawing table 9. to-220fp narrow leads mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 0.95 1.20 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 15.20 15.60 l3 28.6 30.6 l4 10.3 11.1 l5 2.60 2.70 2.90 l6 15.8 16.0 16.2 l7 9 9.3 dia 3 3.2 8197858_rev_b
revision history stf6n65k3(045y) 12/13 docid024554 rev 2 5 revision history table 10. document revision history date revision changes 16-apr-2013 1 first release. 19-apr-2013 2 document status promoted from preliminary data to production data
docid024554 rev 2 13/13 stf6n65k3(045y) please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not authorized for use in weapons. nor are st products designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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